It is used to produce organic silicide, fluosilicic acid and aluminum fluoride. It is also used in chemical analysis, oil well drilling, catalyst, fumigant, etc.

Perfluoro butadiene / C4F6, as a high-efficiency dry etching gas with extremely low greenhouse effect GWP and environmental protection, has faster etching rate, higher selectivity and higher accuracy, and is more suitable for the etching process with high aspect ratio.

Trifluoromethanesulfonic acid has strong corrosivity and hygroscopicity, and is widely used in medicine, chemical industry and other industries. Such as nucleosides, antibiotics, steroids, proteins, carbohydrates, vitamin synthesis, silicone rubber modification, etc.
It can also be used as a catalyst for isomerization and alkylation. Preparation of 2,3-dihydro-2-indenone and tetrahydronaphthone. Remove glycosides from glycoproteins.

Hexafluoroethane can be used in a multifunctional etching technology, which is commonly used in the production of semiconductors. It can be used for selective etching of metal silicides and metal oxides relative to their metal substrates. In addition, it is also used to etch silicon dioxide on silicon.

Carbon tetrafluoride is the most widely used plasma etching gas in the microelectronic industry. It can be widely used in the etching of thin film materials such as silicon, silicon dioxide, silicon nitride, phosphorus silicon glass and tungsten. It is also widely used in the surface cleaning of electronic devices, solar cell production, laser technology, low-temperature refrigeration, leakage inspection, detergent in printed circuit production, etc.

Electronic grade fluoroform is one of the plasma etching gases widely used in microelectronic industry, especially for the etching of silica film. It has the advantages of fast etching speed and good selectivity. In addition, fluoroform is also used in low-temperature mixed refrigerants, organic synthesis intermediates, infrared detector direct coolant, etc.

In the semiconductor industry, chlorine trifluoride is used to clean the reaction chamber of chemical vapor deposition. It has the advantage that the semiconductor substance attached to the bulkhead can be removed without dismantling the reaction chamber. Unlike other alternative cleaners, chlorine trifluoride does not need to undergo plasma activation before use, because the residual heat in the reaction chamber is enough to decompose it and react with semiconductor materials.

Nitrogen trifluoride is an excellent plasma etching gas in microelectronic industry. For etching silicon and silicon nitride, nitrogen trifluoride has higher etching rate and selectivity than carbon tetrafluoride and the mixture of carbon tetrafluoride and oxygen, and has no pollution to the surface. Nitrogen trifluoride has very excellent etching rate and selectivity, leaving no residue on the surface of the etched object, It is also a very good cleaning agent.

Tungsten hexafluoride (wf6) is the only kind of tungsten fluoride that is stable and industrialized. It is mainly used as the raw material of metal tungsten chemical vapor deposition (CVD) process in electronic industry. WSi2 made from it can be used as wiring material in large-scale integrated circuit (LSI). In addition, it can also be used as raw material of semiconductor electrode, fluorinating agent, polymerization catalyst and optical material.